Using a multi-shunt-based current-monitoring circuit with a 50-MHz op amp delivers an overcurrent detection response time of ...
Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...
Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...
In the online niches where people discuss guitars, surfing, makeup and countless other interests, ideology is becoming harder ...
6don MSNOpinion
From the editor: A statue to honor Marty – and an era of baseball that's gone forever
In an era before streaming and broadly televised baseball games, a familiar voice on the radio brought the action – and so ...
For cellular smartphones, the platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain. In the datacenter, ...
Z, Wu-Tang Clan and Kendrick Lamar, Younge joined forces with Master Builder Vincent Van Trigt to recreate his favourite bass ...
Discover the rise of listening rooms in Asia, from Bangkok to Mumbai, where music takes center stage in intimate settings.
Negative differential resistance, sometimes called negative dynamic resistance (NDR), occurs when an increase in voltage ...
This DI describes how some simple circuitry can simulate bouncy contacts, and do so controllably and repeatably, thus ...
Lego love knows no age range and today's advanced sets know no limit on imagination. You can explore it all at Pensacola Brick Convention Sept. 13-14.
Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback