Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

Accurately measuring small shifts in biological markers, like proteins and neurotransmitters, or harmful chemicals in the ...

New vertical device architecture promises stable, ultra-dense semiconductor stacking for future AI and high-performance ...

Bell Labs also developed some of the rocket technology that launched the satellite, a byproduct of an antiballistic missile ...

Infineon has announced that notebook adapter maker Chicony Power, has selected the company’s CoolGaN transistors G5 to power multiple laptop adapters designed for a top customer’s notebooks.

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...

STMicroelectronics’ EVSTDRVG611MC gallium-nitride (GaN) motor-control reference design for appliances and industrial drives handles more than 600W without a heatsink, ensuring a compact outline and ...

NASA’s new silicon-germanium (SiGe) electronics can operate at -180°C and withstand 5 Mrad radiation, enabling autonomous exploration of Europa and other ocean worlds.

EPC claims its seventh-generation, 40-V power transistor delivers up to 3X better performance than equivalent silicon MOSFETs.

Explore how Sandra Shaji, a Samsung engineering leader, is pioneering DTCO infrastructure for sub-2nm semiconductor design.

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...