Tech Xplore on MSN
Aluminum nitride transistor advances next-gen RF electronics
Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are ...
Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known good die (KGD) formats.
A new technical paper titled “Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations ...
Three chip antennas from Taoglas—the ILA.257, ILA.68, and ILA.89—provide Wi-Fi 6/7, ultra-wideband (UWB), and ISM ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results