Using a multi-shunt-based current-monitoring circuit with a 50-MHz op amp delivers an overcurrent detection response time of ...
Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...
Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...
Abstract: This paper describes a power amplifier(PA) that performs mm-Wave frequency range for satellite terminal using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture ...
For cellular smartphones, the platform enables low-noise amplifiers (LNAs) that reduce current consumption while maintaining ultra-low noise figure, helping to reduce battery drain. In the datacenter, ...
Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.
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