Abstract: Thermal characterizations and modeling have been carried out on a 0.15 μm× (4×50) μm gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 °C to 150 °C and ...
Abstract: A V DD-hopping accelerator for on-chip power supply circuits is proposed and the effectiveness of the accelerator circuit is experimentally verified. The quick dropper with the linear ...
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