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Power Integrations is to acquire the assets of Odyssey Semiconductor for its vertical gallium nitride transistor technology. All commercial GaN power transistors are lateral current flow devices, ...

Gallium-nitride (GaN) power transistors have become an efficient and robust solution for modern power electronics for household and low-power industrial applications. The nature of GaN transistors’ ...

IBM and Samsung have teased a new vertical transistor design "breakthrough" they reckon could transform the semiconductor industry and give Moore's Law a few years' more life. The companies hailed the ...

Commercial GaN power devices can’t handle voltages above about 600 volts, however, which limits their use. “Virtually all commercially available GaN power semiconductors are lateral devices,” says ...

With the same electrical characteristics, such as breakdown voltage, on-resistance and maximum current, vertical conduction power devices based on gallium nitride require a smaller die surface than ...

Researchers in Japan have made an important advance in developing a new type of silicon-based transistor by successfully creating vertical transistors from semiconducting nanowires on a silicon ...

The new transistors (above) have vertical current-carrying channels. In older designs (inset), the channels lie flat under the gates. In an effort to keep squeezing more components onto silicon chips, ...

Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...