The insulated gate bipolar transistors (IGBTs) combines an easily driven MOS gate and low conduction loss, and is quickly displacing power bipolar transistors as the device of choice for high current ...

Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...

Today, insulated gate bipolar transistors (IGBTs) have reached a broad penetration in power electronics and are used in many applications such as frequency converters, power supplies and electronic ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...