Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...

Dublin, Oct. 16, 2020 (GLOBE NEWSWIRE) -- The "Hot ICs: A Market Analysis of Artificial Intelligence (AI), 5G, CMOS Image Sensors, and Memory Chips" report from The Information Network has been added ...

Practically since its founding over eight years ago, Automation World has covered the technology and applications of the connected world, now dubbed the “Internet of Things.” The most recent example ...

The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...

A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). “Big ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

As we enter the era of superintelligence and hyper-connected Fourth Industrial Revolution, the importance of high-density and high-performance memory is greater than ever. Currently, the most widely ...

A 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+), dubbed the SST38VF6401B by Microchip, takes advantage of the company’s CMOS SuperFlash technology—a split-gate cell design and ...

One of the main culprits behind BIOS issues is the CMOS battery. The battery powers the CMOS memory, which stores BIOS settings. If the battery is drained, the CMOS will not remember the settings, and ...

LONDON — Researchers from the Microelectronics Research Center at the University of Cambridge in England and from Hitachi Ltd.'s Cambridge Laboratory have made progress toward building a ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...